Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

Author

Lee, Ko-Tao ; Lee, Yeeu-Chang ; Chang, Jenq-Yang ; Gong, Jeng

Author_Institution

Inst. of Electron. Eng., Nat. Tsing HuaUniversity, Hsinchu

Volume

21

Issue

7

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

477

Lastpage

479

Abstract

The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; light emitting diodes; optical properties; sapphire; wide band gap semiconductors; AgCu; Al₂O₃; GaN; electroluminescence; laser scriber; light emitting diode; luminous intensity; mesh-textured sapphire; optical properties; silver-copper layers; Electroluminescence (EL); laser scribe; light-emitting diode (LED); mesh-texture;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2013726

Filename

4773188