Title :
A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors
Author :
Zhang, Gang ; Cressler, John D. ; Niu, Guofu ; Joseph, Alvin J.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large IB leakage current only after simultaneous application of both high JC and high VCB. This new mechanism differs fundamentally from well-known IB degradation mechanisms such as the reverse EB voltage stress, high forward current stress and damage due to ionizing radiation. Extensive measurements and two-dimensional (2-D) simulations have been used to help understand the device physics associated with this new degradation mechanism.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; impact ionisation; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor materials; silicon; Si; SiGe; base current degradation mechanism; bipolar transistors; degradation mechanisms; device measurements; device physics; leakage current; mixed-mode reliability degradation mechanism; room temperature; two-dimensional simulations; Bipolar transistors; Degradation; Germanium silicon alloys; Ionizing radiation; Leakage current; Silicon germanium; Stress; Temperature; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.805566
