Title :
Effect of CF4 plasma pretreatment on low temperature oxides
Author :
Chang, Tzu Yun ; Chen, Hsiao Wei ; Lei, Tan Fu ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
12/1/2002 12:00:00 AM
Abstract :
This study describes a novel technique for forming low temperature oxides (<350°C) using a replacement metal gate process. Low temperature oxides were generated by N2O plasma in a PECVD system with pretreatment in CF4. Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.
Keywords :
MOSFET; carrier mobility; electric breakdown; hot carriers; leakage currents; oxidation; plasma CVD coatings; 350 degC; CF4 plasma pretreatment; MOSFET; N2O plasma; PECVD system; breakdown charge; carrier mobility; current-voltage characteristics; electrical properties; fabrication process; hot carrier stress; leakage current; low temperature oxide; reliability; replacement metal gate process; Electric breakdown; Electric resistance; Fabrication; Hot carriers; Leakage current; MOSFETs; Plasma devices; Plasma properties; Plasma temperature; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.807451
