Title :
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
Author :
Weng, W.Y. ; Chang, S.J. ; Lai, W.C. ; Hsueh, T.J. ; Shei, S.C. ; Zeng, X.F. ; Wu, S.L. ; Hung, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
4/15/2009 12:00:00 AM
Abstract :
We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; magnesium; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlInN:Mg; GaN; UV-to-visible rejection ratio; dark leakage current; semi-insulating cap layer; ultraviolet metal-semiconductor-metal photodetectors; Metal–semiconductor–metal (MSM); photodetector; semi-insulating AlInN cap layer;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2013968
