DocumentCode
1140529
Title
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
Author
Weng, W.Y. ; Chang, S.J. ; Lai, W.C. ; Hsueh, T.J. ; Shei, S.C. ; Zeng, X.F. ; Wu, S.L. ; Hung, S.C.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume
21
Issue
8
fYear
2009
fDate
4/15/2009 12:00:00 AM
Firstpage
504
Lastpage
506
Abstract
We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; magnesium; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlInN:Mg; GaN; UV-to-visible rejection ratio; dark leakage current; semi-insulating cap layer; ultraviolet metal-semiconductor-metal photodetectors; Metal–semiconductor–metal (MSM); photodetector; semi-insulating AlInN cap layer;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2013968
Filename
4773194
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