Analytical subthreshold surface potential model for pocket n-MOSFETs

Author

Pang, Yon-Sup ; Brews, John R.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Arizona, Tucson, AZ, USA

Volume

49

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2209

Lastpage

2216

Abstract

A correct and improved analytical subthreshold surface potential model for pocket n-MOSFETs is proposed. The model is based on solutions of the quasi-two-dimensional (quasi-2-D) Poisson´s equation, which satisfy rigorously the boundary conditions of continuity of potential and electric field in the lateral direction along the surface of pocket devices. The closed-form model equations without any fitting empirical formulas efficiently and correctly generate surface potential profiles between the source and drain of deep-submicrometer as well as long-channel pocket n-MOSFETs. Drain-induced barrier lowering (DIBL) effect of deep-submicrometer pocket n-MOSFETs is also predicted by the potential model. The subthreshold surface potential model is applied to off-state current and threshold voltage of deep-submicrometer or sub-100-nm pocket n-MOSFETs.

Keywords

MOSFET; Poisson equation; semiconductor device models; surface potential; 100 nm; analytical subthreshold surface potential model; boundary condition; deep-submicron device; drain-induced barrier lowering; long-channel device; off-state current; pocket n-MOSFET; quasi-two-dimensional Poisson equation; threshold voltage; Boundary conditions; Leakage current; MESFETs; MOSFET circuits; Numerical simulation; Poisson equations; Predictive models; Surface fitting; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.805235

Filename

1177986