Millimeter-wave planar InP Schottky diodes and their small-signal equivalent circuit

Author

Neidert, Robert E. ; Binari, Steven C.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

37

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

1694

Lastpage

1698

Abstract

Two planar indium phosphide Schottky diode designs have been fabricated and analyzed for millimeter-wave detector applications up to 150 GHz. Device structure and fabrication are discussed, and small-signal equivalent circuit models are presented. The following topics are included: the planar InP diode structure fabricated by megaelectron volt ion implantation. DC and RF measurements, circuit model values, and 94-GHz small-signal detector performance. The zero-bias detector sensitivity at 94 GHz was measured to be as high as 400 mV/mW, and the calculated tangential signal sensitivity was -56 dBm

Keywords

III-V semiconductors; Schottky-barrier diodes; equivalent circuits; indium compounds; ion implantation; microwave detectors; semiconductor device models; solid-state microwave devices; 94 to 150 GHz; DC measurements; III-V semiconductors; InP; MM-wave planar diodes; RF measurements; Schottky diodes; circuit models; fabrication; megaelectron volt ion implantation; microwave devices; millimeter-wave detector applications; small-signal equivalent circuit; zero-bias detector; Detectors; Equivalent circuits; Fingers; Indium phosphide; Ion implantation; Millimeter wave circuits; Millimeter wave measurements; Ohmic contacts; Schottky barriers; Schottky diodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.41033

Filename

41033