DocumentCode :
1140599
Title :
Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55- 
m Quantum-Dash Lasers
Author :
Hein, Sebastian ; Höfling, Sven ; Forchel, Alfred
Author_Institution :
Tech. Phys., Univ. Wurzburg, Wurzburg
Volume :
21
Issue :
8
fYear :
2009
fDate :
4/15/2009 12:00:00 AM
Firstpage :
528
Lastpage :
530
Abstract :
InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100degC with a characteristic temperature of 88 K between 25degC and 85degC and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85degC. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.
Keywords :
III-VI semiconductors; aluminium compounds; amplitude modulation; frequency modulation; gallium compounds; high-speed optical techniques; indium compounds; optical modulation; quantum dash lasers; InAs-InGaAlAs-InP; amplitude-modulation; bandwidth 10 GHz; continuous-wave operation; frequency-modulation; high-speed quantum-dash lasers; linewidth enhancement factor; small-signal modulation bandwidth; temperature 293 K to 298 K; temperature 88 K; wavelength 1.55 mum; Henry factor; linewidth enhancement factor (LEF); modulation bandwidth; quantum dash (QDash); quantum dot (QD); quantum-dash laser;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2014076
Filename :
4773200
Link To Document :
