• DocumentCode
    1140640
  • Title

    Rapid and Minimally Invasive Quantum Cascade Wafer Testing

  • Author

    Bentil, Ekua N. ; Toor, Fatima ; Hoffman, Anthony J. ; Escarra, Matthew D. ; Gmachl, Claire F.

  • Author_Institution
    Dept. of Electr. Eng. & the Mid-Infrared Technol. for Health & the Environ. (MIRTHE) Centre, Princeton Univ., Princeton, NJ
  • Volume
    21
  • Issue
    8
  • fYear
    2009
  • fDate
    4/15/2009 12:00:00 AM
  • Firstpage
    531
  • Lastpage
    533
  • Abstract
    In this work, we demonstrate a rapid and minimally invasive technique for wafer quality testing, which requires using a single etch and metallization step to fabricate a single mesa. The mesa´s electrical and optical properties are characterized and compared with those of a quantum cascade (QC) laser made from the same wafer, to test the validation of our method. This technique is ideal for determining key QC laser parameters and also the level of agreement between a design and actual laser performance without requiring laser processing which can be highly invasive, labor intensive, and time consuming. Measurements between these mesas and actual reference lasers made from the same wafer material differed by less than ~10% in parameters such as emission wavelength, full-width at half-maximum, turn-on voltage, and maximum operating current density, thus proving the adequacy of our technique.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; laser variables measurement; metallisation; optical fabrication; optical testing; quantum cascade lasers; semiconductor device testing; InGaAs-AlInAs-InP; QC laser fabrication; laser measurement; mesa electrical properties; mesa optical properties; metallization step; minimally invasive testing; quantum cascade laser performance; quantum cascade wafer quality testing; single etch step; Intersubband; midinfrared; quantum cascade (QC) laser; wafer quality;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2014392
  • Filename
    4773206