Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

Author

Chang, Leland ; Yang, Kevin J. ; Yeo, Yee-Chia ; Polishchuk, Igor ; King, Tsu-Jae ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

49

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2288

Lastpage

2295

Abstract

The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-κ gate dielectrics are discussed.

Keywords

MOSFET; dielectric thin films; leakage currents; silicon; tunnelling; voltage control; asymmetric double-gate structures; body thickness scaling; channel crystallographic orientation; channel quantum confinement; direct-tunneling gate leakage current; doped channel structures; double-gate MOSFETs; energy quantization; gate dielectric thickness scaling; gate tunneling current; high-k gate dielectrics; threshold voltage control; ultrathin body MOSFETs; vertical electric field reduction; wavefunction penetration; Crystallography; Dielectrics; Gate leakage; Leakage current; MOSFETs; Potential well; Quantization; Threshold voltage; Tunneling; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.807446

Filename

1177996