• DocumentCode
    1140731
  • Title

    GaSb-Based Type I Quantum-Well Light-Emitting Diode Addressable Array Operated at Wavelengths Up to 3.66 \\mu m

  • Author

    Jung, Seungyong ; Suchalkin, Sergey ; Kipshidze, Gela ; Westerfeld, David ; Snyder, Donald ; Johnson, Matthew ; Belenky, Gregory

  • Author_Institution
    Electr. & Comput. Eng. Dept., SUNY at Stony Brook, Stony Brook, NY, USA
  • Volume
    21
  • Issue
    15
  • fYear
    2009
  • Firstpage
    1087
  • Lastpage
    1089
  • Abstract
    Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 mum with approximately 200 muW of quasi- continuous-wave optical power. A mid-infrared 6 times 6 addressable array of Type I LEDs was also demonstrated.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; quantum well devices; GaSb; infrared scene projection; mid-infrared light-emitting diode; quantum-well light-emitting diode addressable array; temperature 293 K to 298 K; Brightness; Chemical industry; Etching; Layout; Light emitting diodes; Optical arrays; Optical sensors; Quantum wells; Semiconductor laser arrays; Temperature; Infrared (IR) scene projection; mid-infrared (mid-IR) light-emitting diode (LED); type I;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2022843
  • Filename
    5166603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1140731