DocumentCode :
1140814
Title :
Reply to comments on "Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels"
Author :
Rinaldi, N.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Univ. of Naples "Federico II", Italy
Volume :
49
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2371
Lastpage :
2373
Abstract :
For comment see ibid., vol.49, no.10, p.1839-41 (2002). The arguments presented in the above comment are refuted. It is shown that the author´s earlier analysis (1998) presents a generalization of previous high-frequency models by means of the rigorous method of matching the Taylor series. This method is consistent with previous formulations, and can be applied to any model, regardless of the fact that a model cannot be derived as a truncated version of the open form solutions. A detailed comparison of recent high-frequency models is also presented.
Keywords :
bipolar transistors; minority carriers; semiconductor device models; series (mathematics); Taylor series matching; arbitrary injection levels; bipolar transistor; general doping profiles; high-frequency models; open form solutions; small-signal minority-carrier transport modeling; Analytical models; Bipolar transistors; Closed-form solution; Doping profiles; Equations; Function approximation; Kirk field collapse effect; Semiconductor process modeling; Taylor series; Tellurium;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.806778
Filename :
1178011
Link To Document :
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