مرکز منطقه ای اطلاع رساني علوم و فناوري - Correction to "Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions"

DocumentCode :

1140825

Title :

Correction to "Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions"

Author :

Brederlow, Ralf ; Weber, W. ; Schmitt-Landsiedel, Doris ; Thewes, Roland

Volume :

Issue :

fYear :

2002

Firstpage :

2373

Lastpage :

2373

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/TED.2003.808739

Filename :

1178012

Link To Document :