Title :
InGaAs resonant tunneling transistors using a coupled-quantum-well base with strained AlAs tunnel barriers
Author :
Koch, Steffen ; Waho, Takao ; Mizutani, Takashi
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
9/1/1994 12:00:00 AM
Abstract :
A bipolar-type resonant tunneling transistor is studied of which the base is identical to a coupled quantum well. On the basis of the InGaAs material system strained AlAs tunnel barriers and a graded InGaAlAs emitter are used. Molecular beam epitaxy growth conditions are studied, showing a specific influence of growth temperature and arsenic pressure. We find clear evidence for resonant tunneling: a saturation of the collector current and a maximum of the transconductance with increasing base-emitter bias in a three-terminal transistor structure. A corresponding effect in a phototransistor structure is found as a maximum of differential current gain with increasing incident light intensity. Room temperature and low temperature (80 K) high-frequency properties are determined and are used to estimate the resonant tunneling time
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solid-state microwave devices; 80 K; InGaAs-InGaAlAs; InGaAs/InGaAlAs; arsenic pressure; base-emitter bias; bipolar-type resonant tunneling transistor; collector current; coupled-quantum-well base; differential current gain; growth temperature; high-frequency properties; incident light intensity; molecular beam epitaxy growth conditions; resonant tunneling time; strained AlAs tunnel barriers; three-terminal transistor structure; transconductance; Circuits; Diodes; Electrons; Energy states; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
