Fabrication and current-drive of SiGe/Si ´Micro-origami´ epitaxial MEMS device on SOI substrate

Author

Tokuda, T. ; Sakano, Y. ; Mori, D. ; Ohta, J. ; Nunoshita, M. ; Vaccaro, P.O. ; Vorob´ev, A. ; Kubota, K. ; Saito, N.

Author_Institution

Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan

Volume

40

Issue

21

fYear

2004

Firstpage

1333

Lastpage

1334

Abstract

A micromirror structure with SiGe/Si heteroepitaxial layer on a silicon-on-insulator (SOI) substrate using a ´Micro-origami´ technique has been successfully fabricated. The micromirror is supported by two curved hinge structures. The device is driven by application of a current, and net angular displacements larger than 10° (static) and 30° (in resonance) were obtained. These values are comparable with or even larger than the reported values for other MEMS optical switches or beam scanning devices. The experimental results suggest that the movement is evoked by a thermal effect. The Micro-origami device has advantages of low operation voltage smaller than 2 V, and structural compatibility with the Si or SiGe LSIs.

Keywords

Ge-Si alloys; micromirrors; microswitches; optical switches; semiconductor materials; MEMS optical switches; SOI substrate; Si-SiO₂; SiGe; SiGe/Si microorigami epitaxial MEMS device; beam scanning devices; curved hinge structures; micromirror structure; silicon-on-insulator substrate; structural compatibility;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20046143

Filename

1344883