Title :
All-epitaxial current- and mode-confined AlGaAs/GaAs VCSEL
Author :
Lu, D. ; Ahn, J. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
An all-epitaxial current- and mode-confining vertical-cavity surface-emitting laser is demonstrated that eliminates the need for any post-growth oxidation step. The current and optical mode are self-aligned and confined to the same lithographically defined area in an AlGaAs cavity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; AlGaAs-GaAs; VCSEL; all-epitaxial current vertical-cavity surface-emitting laser; lithography; mode-confining vertical-cavity surface emitting laser; optical mode; post-growth oxidation; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046159
