DocumentCode
1141303
Title
Analysis of the noise factor of an avalanche photodiode operated in charge-storage mode
Author
Huang, Zhong-Shou
Volume
41
Issue
9
fYear
1994
fDate
9/1/1994 12:00:00 AM
Firstpage
1541
Lastpage
1545
Abstract
A simple expression for the noise factor of an avalanche photodiode (APD) operating in a charge-storage mode is derived. Calculated results for a crystalline silicon APD suggest that input shot noise could be reduced by the sublinear light-transfer characteristics of the APD, which are in good agreement with experimental results
Keywords
avalanche photodiodes; equivalent circuits; random noise; semiconductor device models; semiconductor device noise; silicon; APD noise; Si; avalanche photodiode; charge-storage mode; crystalline Si; input shot noise; noise factor; sublinear light-transfer characteristics; Avalanche photodiodes; Circuit noise; Electron tubes; Equivalent circuits; Image sensors; Noise reduction; Solid state circuits; Switches; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.310105
Filename
310105
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