• DocumentCode
    1141312
  • Title

    40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology

  • Author

    Konczykowska, A. ; Riet, M. ; Berdaguer, P. ; Bove, P. ; Kahn, M. ; Godin, J.

  • Author_Institution
    Agere Technol., Orlando, FL, USA
  • Volume
    41
  • Issue
    16
  • fYear
    2005
  • Firstpage
    31
  • Lastpage
    32
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; 40 Gbit/s; DHBT technology; InP-GaAsSb-InP; digital IC; double-heterojunction bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051546
  • Filename
    1497210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141312