Title :
Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure
Author :
Yang, Q.K. ; Manz, C. ; Bronner, W. ; Köhler, K. ; Wagner, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 μm at 77 K to 4.5 μm at 300 K.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; 4.3 to 4.5 micron; 77 to 300 K; Ga0.47In0.53As-AlAs0.56Sb0.44; Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures; GaInAs-AlAsSb quantum cascade structure; InP; InP substrate; emission peak wavelength; molecular beam epitaxial growth; room-temperature intersubband electroluminescence; room-temperature intersubband emission; triple-well vertical-transition active regions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046618
