Thin-film λ∼3.7 μm ´W´ laser released from InAs substrate

Author

Song, L. ; Degroote, S. ; Vurgaftman, I. ; Meyer, J.R. ; Heremans, P.

Author_Institution

IMEC, Leuven, Belgium

Volume

40

Issue

21

fYear

2004

Firstpage

1342

Lastpage

1344

Abstract

A mid-infrared type-II ´W´ laser fabricated by releasing the epitaxial film from its original InAs substrate is reported. The process exploits the extreme selectivity between GaSb and InAs when etched by hydrochloric acid. The detached film is coated with an Si₃N₄ optical cladding layer, grafted to a foreign GaAs substrate, and cleaved into laser bars. For epitaxial-side-up mounting, the device operates to 70 K, with a low threshold (≃150 W/cm²) when pumped with the maximum available CW power of 320 mW from a 980 nm laser diode.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photolithography; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; sputter etching; 3.7 micron; 320 mW; 70 K; 980 nm; AlSb-GaInAs-GaSb-GaInAs-AlSb-InAlAs; CW power; InAs; detached film; epitaxial film; gallium arsenide substrate; hydrochloric acid etching; indium arsenide substrate; laser bars; laser diode; mid-infrared type-II W laser; optical cladding layer; photoluminescence; thin film W laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20046542

Filename

1344889