DocumentCode :
1141359
Title :
Double layer antireflection coating for high-efficiency passivated emitter silicon solar cells
Author :
Zhao, Jianhua ; Wang, Aihua ; Green, Martin A.
Author_Institution :
Centre for Photovoltaic Devices & Syst., New South Wales Univ., Kensington, NSW, Australia
Volume :
41
Issue :
9
fYear :
1994
fDate :
9/1/1994 12:00:00 AM
Firstpage :
1592
Lastpage :
1594
Abstract :
Recent high-efficiency silicon solar cells employ high-quality oxides both for surface passivation and as a rudimentary antireflection coating. This gives over 3% reflection at the cell front surface, even though the surface is microstructured. A double layer antireflection coating applied to cells with reduced SiO2 thickness reduces the cell reflection. However, although reflection is minimized by reducing the oxide thickness to values below 100 Å, a rapid falloff in both open-circuit voltage and short-circuit current is observed experimentally once this thickness is reduced below 200 Å. The best compromise is found when oxide thickness is 250 Å which allows improved short-circuit current density without appreciable loss in open-circuit voltage
Keywords :
antireflection coatings; elemental semiconductors; optical films; passivation; semiconductor technology; silicon; solar cells; Si-SiO2; double layer antireflection coating; high-efficiency passivated emitter silicon solar cells; high-quality oxides; microstructured surface; open-circuit voltage; oxide thickness; short-circuit current; surface passivation; Australia Council; Circuits; Coatings; Etching; Passivation; Photovoltaic cells; Photovoltaic systems; Reflection; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.310110
Filename :
310110
Link To Document :
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