Title :
Effects of the velocity saturated region on MOSFET characteristics
Author :
Takeuchi, Kiyoshi ; Fukuma, Masao
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
fDate :
9/1/1994 12:00:00 AM
Abstract :
A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling
Keywords :
insulated gate field effect transistors; semiconductor device models; MOSFET; analytical model; drain current; effective channel length; gate drive; numerical simulation; short channel devices; velocity saturation; Analytical models; Circuit simulation; MOS devices; MOSFET circuits; Microelectronics; National electric code; Numerical simulation; Testing; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
