DocumentCode :
1141449
Title :
Impact ionisation in strained SiGe pMOSFETs
Author :
Nicholas, G. ; Dobbie, A. ; Grasby, T.J. ; Whall, T.E. ; Parker, E.H.C.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Volume :
41
Issue :
16
fYear :
2005
Firstpage :
59
Lastpage :
60
Keywords :
Ge-Si alloys; MOSFET; hole mobility; impact ionisation; semiconductor device measurement; Si0.64Ge0.36; band splitting; compressively strained pMOSFET; hole mobility; impact ionisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20052074
Filename :
1497224
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1141449
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