A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

Author

Abramo, Antonio ; Baudry, L. ; Brunetti, Rosella ; Castagne, Rene ; Charef, M. ; Dessenne, F. ; Dollfus, Philippe ; Dutton, Robert ; Engl, W.L. ; Fauquembergue, R. ; Fiegna, Claudio ; Fischetti, Massimo V. ; Galdin, Sylvie ; Goldsman, Neil ; Hackel, Micha

Author_Institution

Bologna Univ., Italy

Volume

41

Issue

9

fYear

1994

Firstpage

1646

Lastpage

1654

Abstract

In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have been used here to calculate a relatively simple set of transport characteristics, such as the average electron energy. The results have been contributed by researchers from Japan, Europe, and the United States, and the results were subsequently collected by an independent observer. Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions.<>

Keywords

Boltzmann equation; Monte Carlo methods; carrier mobility; digital simulation; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; high field effects; impact ionisation; physics computing; silicon; Boltzmann transport equation; Monte Carlo particle technique; Si; high-energy electron transport; numerical solutions; silicon; transport characteristics; Boltzmann equation; Computational modeling; Computer hacking; Electrons; Europe; Laboratories; Lifting equipment; Microelectronics; Monte Carlo methods; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.310119

Filename

310119