Temperature-independent carrier mobility in large-grain poly-Si transistors

Author

Katoh, Teruo

Author_Institution

LSI Process Technol. Dept., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

41

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1672

Lastpage

1674

Abstract

The temperature dependence of carrier mobility in large-grain poly-Si transistors has been studied, and the reason why it depends only weakly on the measuring temperature is revealed. In the study, the mobility in each grain is supposed to have the similar temperature dependence as in bulk Si and is formulated as a function of the temperatures. Thermionic emission model considering this temperature dependence shows that the temperature-independent carrier mobility is due to the balance between the increase of the mobility and the decrease of potential barriers

Keywords

carrier mobility; characteristics measurement; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; thermionic electron emission; MOSFETs; Si; large-grain polysilicon transistors; measuring temperature; potential barriers; temperature-independent carrier mobility; thermionic emission model; Annealing; Crystallization; Grain boundaries; MOSFETs; Plasma temperature; Semiconductor films; Temperature dependence; Temperature measurement; Thermionic emission; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.310124

Filename

310124