Title :
Comments on "Oxide-field dependence of electron injection from silicon into silicon dioxide" [with reply]
Author :
Fischetti, M.V. ; Fiegna, Claudio ; Sangiorgi, Enrico ; Selmi, Luca
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In the study of electron injection from Si into SiO/sub 2/ one would reach conclusions vastly different from those of the above paper when accounting for a realistic density-of-states in Si at high electron energy and employing a better approximation for the probability of transmission across the Si-SiO/sub 2/ interface.<>
Keywords :
elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO/sub 2/; Si-SiO/sub 2/ interface; density-of-states; electron injection; oxide-field dependence; silicon; silicon dioxide; transmission probability; Distribution functions; Doping; Electrons; Kinetic energy; Predictive models; Semiconductor process modeling; Silicon compounds; Solid modeling; Tail; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
