DocumentCode
1141622
Title
High-performance, 1.55 μm AlGaAsSb/AlGaSb pin photodetectors
Author
Lohokare, S.K. ; Sulima, O.V. ; Solov´ev, V.A. ; Ivanov, S.V. ; Prather, D.W.
Author_Institution
Dept. of Electr. and Comput. Eng., Univ. of Delaware, Newark, DE, USA
Volume
40
Issue
21
fYear
2004
Firstpage
1377
Lastpage
1378
Abstract
Results obtained from the fabrication and characterisation of double heterostructure AlGaAsSb/AlGaSb pin photodetectors designed for 1.55 μm wavelength are reported. The photodetectors were fabricated using a customised inductively coupled plasma etching process, and exhibited high external quantum efficiency and record speed characteristics (3 dB bandwidth of 10 GHz).
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; p-i-n photodiodes; photodetectors; sputter etching; 1.55 micron; 10 GHz; AlGaAsSb-AlGaSb; double heterostructure p-i-n photodetectors; external quantum efficiency; inductively coupled plasma etching process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046148
Filename
1344911
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