DocumentCode
1141634
Title
Reliable non-Zn-diffused InP/InGaAs avalanche photodiode with buried n-InP layer operated by electron injection mode
Author
Hirota, Y. ; Muramoto, Y. ; Takeshita, T. ; Ito, T. ; Ito, H. ; Ando, S. ; Ishibashi, T.
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume
40
Issue
21
fYear
2004
Firstpage
1378
Lastpage
1379
Abstract
A new InP-based avalanche photodiode with a p-type neutral absorption layer and a buried n-contact has been developed. From the test results, it is confirmed that the device has good receiver performance, with a minimum sensitivity of -26.8 dBm at 10 Gbit/s, and sufficient reliability.
Keywords
III-V semiconductors; adsorbed layers; avalanche diodes; avalanche photodiodes; buried layers; gallium arsenide; indium compounds; optical receivers; semiconductor device reliability; 10 Gbit/s; InP-InGaAs; buried n InP layer; buried n contact; electron injection mode; p type neutral absorption layer; receiver; reliability; reliable nonZn diffused InP/InGaAs avalanche photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046652
Filename
1344912
Link To Document