Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC bipolar junction transistor (BJT) based on a 50 μm, 7×10¹⁴ cm^-3 doped drift layer, achieving an emitter current density of 150 A/cm² at V_CEO=5 V, suggesting a specific on-resistance (R_{SP_ON}) of 33 mΩ cm² without considering current spreading or 49 mΩ cm² if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with R_{SP_ON}=78 mΩ cm².