Title :
Comparison of quantized Hall resistances RH(2) and RH(4) of a GaAs/AlGaAs heterostructure device
Author :
Nagashima, N. ; Date, M. ; Wakabayashi, J. ; Kawaji, S. ; Yoshihiro, K. ; Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C.
Author_Institution :
Gakushuin Univ., Tokyo, Japan
fDate :
8/1/1994 12:00:00 AM
Abstract :
Quantized Hall resistances RH(4) and RH(2) of a GaAs/AlGaAs heterostructure were compared with reference resistors whose values are close to h/4e2 or h/2e2. The values of the reference resistors were compared with a 100 ohm standard resistor via a cryogenic current comparator (CCC) resistance bridge. Results showed that (4×RH(4)-2×RH(2))/2×RH (2)=(0.037±0.019)×10-6
Keywords :
III-V semiconductors; aluminium compounds; comparators (circuits); electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor junctions; GaAs-AlGaAs; GaAs/AlGaAs heterostructure device; cryogenic current comparator; quantized hall resistances; reference resistors; resistance bridge; Current measurement; Electric resistance; Gallium arsenide; Humidity measurement; Magnetic field measurement; Pressure measurement; Resistors; Rotation measurement; Switches; Temperature distribution;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
