Title :
The hydrogenated amorphous silicon reach-through avalanche photodiodes (a-Si:H RAPDs)
Author :
Hong, Jyh-Wong ; Chen, Yu-wen ; Laih, Wuu-larng ; Fang, Yean-Kuen ; Chang, Chun-Yen ; Gong, C.
Author_Institution :
Semicond. & Syst. Lab., Nat. Chen Kung Univ., Taiwan
fDate :
2/1/1990 12:00:00 AM
Abstract :
The RAPD (reach-through avalanche photodiode) structure is adopted to improve the electrical and optical performance of photosensing devices made of a-Si:H. Both the electron-injection n+ -i-δp-i-p+ and hole-injection p+-i-δn-i-n+ a-Si:H RAPDs are fabricated on the indium-tin-oxide-coated glass substrates by plasma-enhanced chemical vapor deposition (PECVD). The photocurrent multiplication method is employed to study the multiplication factors and the impact ionization coefficients of the RAPDs. Since the electron-injection models have better performance, the relationships between the device dimensions and characteristics, such as I-V curves, optical gains, impact ionization rates, and excess noise factors, are further studied. The results indicate that the a-Si:H RAPD is a promising device for photosensing applications
Keywords :
amorphous semiconductors; avalanche photodiodes; elemental semiconductors; hydrogen; photodetectors; plasma CVD; silicon; substrates; I-V curves; ITO; InSnO; Si:H; electrical performance; electron-injection; electron-injection models; excess noise factors; glass substrates; hole-injection; hydrogenated amorphous silicon reach-through avalanche photodiodes; impact ionization coefficients; impact ionization rates; multiplication factors; optical gains; optical performance; photocurrent multiplication method; photosensing applications; photosensing devices; plasma-enhanced chemical vapor deposition; Amorphous silicon; Avalanche photodiodes; Chemical vapor deposition; Glass; Impact ionization; Optical devices; Optical noise; Plasma chemistry; Plasma devices; Plasma properties;
Journal_Title :
Quantum Electronics, IEEE Journal of
