DocumentCode
1141762
Title
Mean lifetime calculations of quantum well structures: a rigorous analysis
Author
Ghatak, Ajoy K. ; Goyal, I.C. ; Gallawa, R.L.
Author_Institution
Dept. of Phys., Indian Inst. of Technol., New Delhi, India
Volume
26
Issue
2
fYear
1990
fDate
2/1/1990 12:00:00 AM
Firstpage
305
Lastpage
310
Abstract
A matrix method that is applicable to an arbitrary potential variation represented by a set of linear functions such as multiple quantum well structures in the presence of a static electric field is described. An analytical expression for the mean lifetime of the quasi-bound state of a single quantum well in the presence of a static electric field is obtained
Keywords
carrier lifetime; electric fields; matrix algebra; semiconductor quantum wells; arbitrary potential variation; linear functions; matrix method; mean lifetime; multiple quantum well structures; quantum well structures; quasi-bound state; single quantum well; static electric field; Bismuth; Convergence; Eigenvalues and eigenfunctions; NIST; Physics; Potential energy; Schrodinger equation; Slabs;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.44962
Filename
44962
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