GaAsFET and HEMT small-signal parameter extraction from measured S-parameters

Author

Wurtz, Larry T.

Author_Institution

Dept. of Electr. Eng., Alabama Univ., Tuscaloosa, AL, USA

Volume

43

Issue

4

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

655

Lastpage

658

Abstract

An improved method for extracting small-signal model parameters including package parasitics for GaAsFET and HEMT devices is described. Monte Carlo simulation techniques result in optimized model component values for minimum error between measured and modeled S-parameters. Simulation time is reduced by starting from initial component values derived from an improved direct extraction procedure

Keywords

Monte Carlo methods; S-parameters; circuit analysis computing; digital simulation; electronic engineering computing; field effect transistors; gallium arsenide; high electron mobility transistors; semiconductor device models; FET; GaAs; HEMT; Monte Carlo simulation; bond wire inductances; direct extraction; measured S-parameters; minimum error; modeled S-parameters; optimized model; package parasitics; simulation time; small-signal parameter extraction; Bonding; Electrical resistance measurement; HEMTs; Microwave frequencies; Microwave transistors; Packaging; Parameter extraction; Parasitic capacitance; Scattering parameters; Transconductance;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.310183

Filename

310183