DocumentCode :
1142144
Title :
Design of an opto-electronic modulator driver amplifier for 40-Gb/s data rate systems
Author :
Long, Adrian ; Buck, Jeff ; Powell, Royston
Author_Institution :
Bookham Technol., Towcester, UK
Volume :
20
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2015
Lastpage :
2021
Abstract :
This paper describes the design and performance of a broad-band driver amplifier for 40-Gb/s noreturn-to-zero system applications. The function of the amplifier is to raise the output from a multiplexer (nominally 0.4 V peak to peak) to a level of ∼5 Vp-p, which is suitable to drive a GaAs-based Mach-Zehnder optoelectronic modulator. The amplifier module contains two GaAs pseudomorphic high-electron mobility transistor traveling-wave MMICs fabricated on a 0.2-μm gate process. The design issues relating to the specific requirements of a modulator driver amplifier and the techniques to resolve them are described.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; driver circuits; electro-optical modulation; field effect MMIC; gallium arsenide; integrated optoelectronics; optical communication equipment; wideband amplifiers; 0.2 micron; 0.2-μm gate process; 0.4 V; 40 Gbit/s; 40-Gb/s data rate systems; GaAs; GaAs pseudomorphic high-electron mobility transistor traveling-wave MMIC; GaAs-based Mach-Zehnder optoelectronic modulator; amplifier module; broad-band driver amplifier; multiplexer; noreturn-to-zero system applications; opto-electronic modulator driver amplifier design; Bandwidth; Bit rate; Costs; Degradation; Driver circuits; Gallium arsenide; MMICs; Optical amplifiers; Optical modulation; Optical transmitters;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2002.806753
Filename :
1178133
Link To Document :
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