High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency

Author

Wong, Man Hoi ; Pei, Yi ; Brown, David F. ; Keller, Stacia ; Speck, James S. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

30

Issue

8

fYear

2009

Firstpage

802

Lastpage

804

Abstract

A high-performance N-face GaN metal-insulator-semiconductor high-electron-mobility transistor was fabricated. A dual-AlN back-barrier scheme was developed using polarization engineering to provide a large total dipole moment, which allowed enhanced modulation doping for a higher 2-D electron gas density without parallel conduction. Devices with 0.6-mum gate length showed an fT and f _max of 17 and 58 GHz, respectively. A highest power-added efficiency (PAE) of 71% at 4 GHz was measured in these devices with 20-V drain bias. At 28 V, an output power density of 6.4 W/mm with 67% PAE was achieved.

Keywords

MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; 2-D electron gas density; AlN; GaN; N-face microwave MIS-HEMT; back-barrier scheme; efficiency 67 percent; efficiency 71 percent; enhanced modulation doping; frequency 17 GHz; frequency 4 GHz; frequency 58 GHz; metal-insulator-semiconductor high-electron-mobility transistor; polarization engineering; power-added efficiency; size 0.6 mum; total dipole moment; voltage 20 V; voltage 28 V; AlN; GaN; N-face; back-barrier; high-electron-mobility transistor (HEMT); metal–insulator–semiconductor (MIS); microwave power; power-added efficiency (PAE);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2024443

Filename

5169884