Title :
1550 nm GaInNAsSb distributed feedback laser diodes on GaAs
Author :
Gupta, J.A. ; Barrios, P.J. ; Aers, G.C. ; Lapointe, J.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON
Abstract :
Single mode laser diodes on GaAs substrates were developed using GalnNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous- wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10degC with a very high sidemode suppression ratio of > 50 dB throughout most of the operational range, and output power up to 15 mW.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical waveguides; ridge waveguides; semiconductor lasers; semiconductor quantum wells; Cr; GaAs; GaInNAsSb; continuous-wave operation; distributed feedback devices; distributed feedback laser diodes; double quantum well active regions; dry-etched narrow ridge waveguide; lateral chromium gratings; molecular beam epitaxy; regrowth-free process; sidemode suppression ratio; single mode laser diodes; temperature 10 C; wavelength 1550 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080479
