• DocumentCode
    1142811
  • Title

    Low-threshold injectorless quantum cascade laser with four material compositions

  • Author

    Katz, S. ; Boehm, G. ; Amann, M.-C.

  • Author_Institution
    Walter-Schottky Inst., Techische Univ. Munchen, Garching
  • Volume
    44
  • Issue
    9
  • fYear
    2008
  • Firstpage
    580
  • Lastpage
    580
  • Abstract
    A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57 kA/cm2 at 300 K and a maximum operation temperature of 360 K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical design techniques; optical materials; quantum cascade lasers; AlAs-GaInAs; AlAs-InAs; AlInAs-GaInAs; AlInAs-InAs; active zone; injectorless quantum cascade laser; laser performance; strain compensated material system; temperature 300 K; temperature 360 K; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080613
  • Filename
    4497338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1142811