DocumentCode
1143028
Title
Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation
Author
Yang, Sung-Chae ; Suematsu, Hisayuki ; Jiang, Weihua ; Yatsui, Kiyoshi
Author_Institution
Extreme Energy-Density Res. Inst., Nagaoka Univ. of Technol., Niigata, Japan
Volume
30
Issue
5
fYear
2002
fDate
10/1/2002 12:00:00 AM
Firstpage
1816
Lastpage
1819
Abstract
Using the intense pulsed ion-beam evaporation technique, we have succeeded in the preparation of polycrystalline silicon thin films. Good crystallinity and high deposition rates have been achieved without substrate heating. The crystallinity of poly-Si film has been improved by increasing the density of the ablation plasma. The intense diffraction peaks and high density of poly-Si thin films can be obtained by biasing the substrate.
Keywords
evaporation; ion beam applications; plasma materials processing; semiconductor thin films; silicon; Si; ablation plasma density; crystallinity; high deposition rates; intense pulsed ion-beam evaporation technique; poly-Si film; polycrystalline Si thin films; pulsed ion-beam evaporation; Crystallization; Heating; Plasma devices; Plasma sources; Plasma temperature; Plasma waves; Semiconductor thin films; Silicon; Substrates; Transistors;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2002.806619
Filename
1178212
Link To Document