DocumentCode :
1143181
Title :
Sleep Transistor Sizing for Leakage Power Minimization Considering Charge Balancing
Author :
Chiou, De-Shiuan ; Chen, Shih-Hsin ; Chang, Shih-Chieh
Author_Institution :
Dept. of Comput. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
17
Issue :
9
fYear :
2009
Firstpage :
1330
Lastpage :
1334
Abstract :
One of the effective techniques to reduce leakage power is power gating. Previously, a distributed sleep transistor network was proposed to reduce the sleep transistor area for power gating by connecting all the virtual ground lines together to minimize the maximum instantaneous current flowing through sleep transistors. In this paper, we propose a new methodology for determining the sizes of sleep transistors of the DSTN structure. We present novel algorithms and theorems for efficiently estimating a tight upper bound of the voltage drop and minimizing the sizes of sleep transistors. We also present mathematical proofs of our theorems and lemmas in detail. Our experimental results show 23.36% sleep transistor area reduction compared to the previous work on average.
Keywords :
leakage currents; minimisation; power transistors; charge balancing; distributed sleep transistor network; leakage power minimization; power gating; sleep transistor sizing; virtual ground lines; IR drop; Leakage; power gating;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2001247
Filename :
5169993
Link To Document :
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