Title :
Ultralow-threshold-current lasing in inversion channel lasers
Author :
Taylor, G.W. ; Claisse, P.R. ; Doctor, D.P. ; Cooke, P.W.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
A new regime of semiconductor laser operation was observed in quantum-well inversion channels of double heterostructure optoelectronic switches. The quantum-well active region operated with substantial excess negative charge imbalance due to the proximity of a high-density depleted donor charge sheet. Threshold current densities as low as 15 A/cm/sup 2/ in as-cleaved 400- mu m-long devices were measured, and unusual high-frequency operation under low power operation was observed. These qualities may be of great significance for optical interconnections and optoelectronic integrated circuits.<>
Keywords :
integrated optoelectronics; optical switches; population inversion; semiconductor junction lasers; semiconductor switches; 400 micron; HF; as-cleaved; diode lasers; double heterostructure optoelectronic switches; excess negative charge imbalance; high-density depleted donor charge sheet; high-frequency operation; inversion channel lasers; low power operation; optical interconnections; optoelectronic integrated circuits; quantum-well active region; quantum-well inversion channels; semiconductor laser operation; threshold current densities; ultralow-threshold-current lasing; Current measurement; Density measurement; Integrated circuit measurements; Optical interconnections; Photonic integrated circuits; Power measurement; Power semiconductor switches; Quantum well lasers; Semiconductor lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
