DocumentCode :
1144140
Title :
Experimental Realization of an Eight-Stage XRAM Generator Based on ICCOS Semiconductor Opening Switches, Fed by a Magnetodynamic Storage System
Author :
Dedié, Philipp ; Brommer, Volker ; Scharnholz, Sigo
Author_Institution :
German-French Res. Inst. of St. Louis, St. Louis
Volume :
45
Issue :
1
fYear :
2009
Firstpage :
266
Lastpage :
271
Abstract :
Inductive energy storage systems reach energy densities being one order of magnitude higher than those of capacitive storages. Therefore, pulsed power supplies for electric weapon or defense systems can be much more compact with inductive storages instead of capacitive ones. There is, however, one obstacle to be overcome: Inductive storage systems need opening switches instead of closing switches, which are much more difficult to realize. Using our recently developed inverse current commutation with semiconductor devices (ICCOS) countercurrent thyristor high-power opening switch capable of interrupting currents up to 28 kA, we report the experimental realization of an eight-stage XRAM generator fed by the world´s most compact magnetodynamic storage system (MDS; energy density of 60 MJ/m3 , power output of 1.2 MW with 4 kA during 5 s) which is able to multiply the MDS´s current output by eight to 32 kA. Experimental data show a pretty perfect concordance between simulation and experiment so that XRAM generators with much more than eight stages and higher energies should easily be feasible.
Keywords :
magnetic storage; random-access storage; semiconductor switches; voltage multipliers; ICCOS semiconductor opening switches; XRAM generator; capacitive storages; current 4 kA; defense systems; electric weapon; inductive energy storage systems; inverse current commutation; magnetodynamic storage system; power 1.2 MW; pulsed power supplies; Countercurrent commutation; Inverse Current Commutation with Semiconductor device (ICCOS); XRAM generator; current multiplication; inductive storage; magnetodynamic storage; magnetodynamic storage system (MDS); opening switch; power multiplication;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2008.2008418
Filename :
4773620
Link To Document :
بازگشت