DocumentCode
1144140
Title
Experimental Realization of an Eight-Stage XRAM Generator Based on ICCOS Semiconductor Opening Switches, Fed by a Magnetodynamic Storage System
Author
Dedié, Philipp ; Brommer, Volker ; Scharnholz, Sigo
Author_Institution
German-French Res. Inst. of St. Louis, St. Louis
Volume
45
Issue
1
fYear
2009
Firstpage
266
Lastpage
271
Abstract
Inductive energy storage systems reach energy densities being one order of magnitude higher than those of capacitive storages. Therefore, pulsed power supplies for electric weapon or defense systems can be much more compact with inductive storages instead of capacitive ones. There is, however, one obstacle to be overcome: Inductive storage systems need opening switches instead of closing switches, which are much more difficult to realize. Using our recently developed inverse current commutation with semiconductor devices (ICCOS) countercurrent thyristor high-power opening switch capable of interrupting currents up to 28 kA, we report the experimental realization of an eight-stage XRAM generator fed by the world´s most compact magnetodynamic storage system (MDS; energy density of 60 MJ/m3 , power output of 1.2 MW with 4 kA during 5 s) which is able to multiply the MDS´s current output by eight to 32 kA. Experimental data show a pretty perfect concordance between simulation and experiment so that XRAM generators with much more than eight stages and higher energies should easily be feasible.
Keywords
magnetic storage; random-access storage; semiconductor switches; voltage multipliers; ICCOS semiconductor opening switches; XRAM generator; capacitive storages; current 4 kA; defense systems; electric weapon; inductive energy storage systems; inverse current commutation; magnetodynamic storage system; power 1.2 MW; pulsed power supplies; Countercurrent commutation; Inverse Current Commutation with Semiconductor device (ICCOS); XRAM generator; current multiplication; inductive storage; magnetodynamic storage; magnetodynamic storage system (MDS); opening switch; power multiplication;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2008.2008418
Filename
4773620
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