Planar FET oscillators using periodic microstrip patch antennas

Author

Birkeland, Joel ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

37

Issue

8

fYear

1989

fDate

8/1/1989 12:00:00 AM

Firstpage

1232

Lastpage

1236

Abstract

An integrated oscillator/antenna is presented that uses a single microstrip leaky-wave structure as both the resonant and the radiating element. This resonant antenna is connected to a GaAs metal-semiconductor field-effect transistor which acts as the negative resistance element in the oscillator circuit. This type of oscillator is similar in its operating principle to one reported using Gunn diodes and a periodically notched dielectric image guide. This circuit exhibits the high DC-RF conversion efficiency that is typical of field-effect transistor oscillators. The planar circuit is simple and inexpensive to construct, occupies a small volume, and can conform to different surface profiles. Such circuits are suitable for use in millimeter-wave systems as well as at microwave frequencies. A design procedure is given, and the performance of X-band prototype circuits is reported. Prototype circuits showed a 9 dB isotropic conversion gain and 40 MHz tuning range at 9.5 GHz

Keywords

Schottky gate field effect transistors; microstrip antennas; microwave oscillators; solid-state microwave circuits; 9 dB; 9.5 GHz; FET oscillators; GaAs; MESFET; X-band; high DC-RF conversion efficiency; microstrip leaky-wave structure; microwave frequencies; millimeter-wave systems; negative resistance element; periodic microstrip patch antennas; radiating element; resonant antenna; surface profiles; Diodes; FETs; Gallium arsenide; Gunn devices; Microstrip antennas; Oscillators; Patch antennas; Prototypes; RLC circuits; Resonance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.31084

Filename

31084