DocumentCode :
1144230
Title :
Pure strain effects in strained-layer multiple-quantum-well lasers
Author :
Yasaka, Hiroshi ; Iga, Ryuzo ; Noguchi, Yoshio ; Yoshikuni, Yuzo
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Volume :
4
Issue :
8
fYear :
1992
Firstpage :
826
Lastpage :
828
Abstract :
Pure effects of strain in strained-layer multiple-quantum-well (MQW) lasers are measured separately from quantum effects using Fabry-Perot (FP) lasers with the same well thicknesses but different strains. The differential gain and gain saturation coefficients and the K factors of the lasers are determined by measuring relative-intensity-noise (RIN) spectra with various bias conditions. The differential gain coefficient increases when the compressive strain increases. The gain saturation coefficient also increases with increasing compressive strain. The K factor increases slightly when the compressive strain increases because of the slight increase in the ratio of the gain saturation coefficient to the differential gain coefficient.<>
Keywords :
deformation; optical constants; optical saturation; semiconductor junction lasers; Fabry-Perot lasers; K factors; MQW; RIN spectra; bias conditions; compressive strain; differential gain; diode lasers; gain coefficient; gain saturation coefficients; relative-intensity-noise; strained-layer multiple-quantum-well lasers; well thicknesses; Capacitive sensors; Chemical lasers; Laser transitions; Quantum well devices; Quantum well lasers; Semiconductor lasers; Strain measurement; Tensile strain; Thickness measurement; X-ray lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.149876
Filename :
149876
Link To Document :
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