DocumentCode
1144320
Title
Laser-activated p-i-n diode switch for RF application
Author
Rosen, Arye ; Stabile, P. ; Janton, W. ; Gombar, A. ; Basile, Pierpaolo
Author_Institution
David Sarnoff Res. Center, Princeton, NJ
Volume
37
Issue
8
fYear
1989
fDate
8/1/1989 12:00:00 AM
Firstpage
1255
Lastpage
1257
Abstract
Results obtained utilizing an optically activated RF switch in the 2-30-MHz range demonstrate the advantages in optically controlled high-power switches from HF to millimeter wave. Testing of a 0.25-mm-thick p-i-n device activated with 116-W peak optical power from a two-dimensional laser array in a 50-Ω system shows isolation between 20.8 and 49 dB, and an average insertion loss of 0.38 dB when measured between 2.5 and 30 MHz
Keywords
laser beam applications; p-i-n diodes; photodiodes; semiconductor switches; 0.38 dB; 116 W; 2 to 30 MHz; RF application; insertion loss; isolation; optically activated RF switch; optically controlled high-power switches; p-i-n device; peak optical power; two-dimensional laser array; Hafnium; Millimeter wave measurements; Optical arrays; Optical control; Optical switches; P-i-n diodes; PIN photodiodes; Radio frequency; Semiconductor laser arrays; System testing;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.31088
Filename
31088
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