Title :
Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m
Author :
Yellen, S.L. ; Waters, R.G. ; Shephard, A.H. ; Baumann, J.A. ; Dalby, R.J.
Author_Institution :
McDonnell Douglas Electronics Systems Co., Elmsford, NY, USA
Abstract :
Preliminary reliability studies of strained In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers operating at 0.81 mu m are reported. InAlGaAs lasers, a possible replacement for AlGaAs lasers, have been studied with respect to three failure mechanisms. Uncoated In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers have exhibited catastrophic optical damage limits of 1.87 MW/cm/sup 2/, which is equal to that of similar AlGaAs lasers. Further, the lasers are both free of <100> DLD-induced sudden failures and exhibit low degradation rates even in this early stage of their development.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical testing; reliability; semiconductor junction lasers; 0.81 micron; IR; In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As; catastrophic optical damage limits; failure mechanisms; laser reliability; low degradation rates; semiconductors; uncoated diode lasers; Composite materials; Degradation; Gallium arsenide; Indium; Materials reliability; Optical materials; Optical pumping; Power system reliability; Pump lasers; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
