Title :
Amplitude-modulation characteristics of barrier-reservoir and quantum-well electron-transfer (BRAQWET) modulators
Author :
Freeman, Paul N. ; Bhattacharya, Pallab ; Jaffe, Mark ; Singh, Jasprit ; Zhang, Xiangkun
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
We have studied theoretically and experimentally the intensity-modulation characteristics of GaAs-based light modulators based on the barrier-reservoir and quantum-well electron-transfer (BRAQWET) structure. The transmission-voltage characteristics are nonlinear and follow an inverse exponential relationship which is derived herein. It is also seen that a multiple-period BRAQWET structure is unnecessary and partially ineffective for amplitude modulation and that a one-period BRAQWET structure can give comparable results while providing more versatility for the device design. AlxGa1-xAs-based guided-wave modulators are demonstrated with a 50% modulation index at a drive voltage of 1 V
Keywords :
III-V semiconductors; aluminium compounds; amplitude modulation; electro-optical modulation; electron mobility; gallium arsenide; inverse problems; optical waveguide theory; semiconductor quantum wells; 1 V; AlxGa1-xAs-based guided-wave modulators; AlGaAs; BRAQWET modulators; GaAs; GaAs-based light modulators; amplitude modulation; amplitude-modulation characteristics; barrier-reservoir; device design; drive voltage; intensity-modulation characteristics; inverse exponential relationship; modulation index; multiple-period BRAQWET structure; one-period BRAQWET structure; quantum-well electron-transfer modulators; transmission-voltage characteristics; Amplitude modulation; Chirp modulation; Electrons; Nonlinear optics; Optical modulation; Optical transmitters; Phase modulation; Quantum well devices; Quantum wells; Reservoirs;
Journal_Title :
Quantum Electronics, IEEE Journal of
