Title :
Consequences of structural disorder on laser properties in quantum wire lasers
Author :
Singh, Jasprit ; Arakawa, Yasuhiko ; Bhattacharya, Pallab
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire.<>
Keywords :
laser theory; laser transitions; semiconductor junction lasers; semiconductor quantum wires; density of states; electron state localisation; electronic properties; electronic states; hole state localisation; interband transition; interface-roughness-related disorder; intraband relaxation processes; laser properties; optoelectronic properties; quantum wire lasers; quantum wire structure; quasi 1D system localisation; structural disorder; Charge carrier processes; Effective mass; Electrons; Fabrication; Gallium arsenide; Heterojunctions; Quantum well lasers; Random number generation; Semiconductor lasers; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
