Linewidth of a semiconductor laser operating near threshold

Author

Hui, Rongqing ; Caponio, Nunzio ; Benedetto, Sergio ; Montrosset, Ivo

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

Volume

4

Issue

8

fYear

1992

Firstpage

841

Lastpage

843

Abstract

The linewidth of a single-mode semiconductor laser operating in the threshold region has been studied both theoretically and experimentally. Due to strong phase-amplitude coupling in a semiconductor laser, its linewidth versus current characteristics exhibit a local minimum below threshold and a local maximum just about threshold. This implies a limitation in the minimum optical bandwidth achievable in a resonant-type semiconductor laser optical amplifier. The theoretical prediction has been verified experimentally on a conventional DFB semiconductor laser.<>

Keywords

distributed feedback lasers; laser modes; semiconductor junction lasers; spectral line breadth; DFB semiconductor laser; diode laser linewidth; laser current; minimum optical bandwidth; near threshold; resonant-type semiconductor laser optical amplifier; semiconductor laser; single-mode; strong phase-amplitude coupling; threshold region; Bandwidth; Gas lasers; Laser noise; Laser theory; Optical feedback; Optical filters; Optical noise; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.149881

Filename

149881