Title :
A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs
Author :
Matsukawa, Takashi ; Endo, Kazuhiko ; Liu, Yongxun ; O´uchi, Shinichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Tsukada, Junichi ; Ishii, Kenichi ; Masahara, Meishoku ; Sakamoto, Kunihiro ; Suzuki, Eiichi
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fDate :
6/1/2008 12:00:00 AM
Abstract :
A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage and the Mo gated pMOS FinFET exhibited symmetrical v alues of (0.31/0.36 V), which are desirable for the FinFET CMOS circuit operation with enhanced current drivability. It was also confirmed that the Ta/Mo interdiffusion process causes no degradation in the carrier mobility.
Keywords :
CMOS integrated circuits; MOSFET; chemical interdiffusion; molybdenum alloys; tantalum alloys; FinFET CMOS circuit operation; FinFET fabrication; TaMo; gate-first process; interdiffusion dual metal gate technology; metal-etch off step; nMOS FinFET; threshold voltage; CMOSFET; FinFET; Molybdenum (Mo); Tantalum (Ta); dual metal gate; interdiffusion; work function (WF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.922965
