Title :
High-power optically pumped VECSEL using a double-well resonant periodic gain structure
Author :
Li Fan ; Hader, J. ; Schillgalies, M. ; Fallahi, M. ; Zakharian, A.R. ; Moloney, J.V. ; Bedford, R. ; Murray, J.T. ; Koch, S.W. ; Stolz, W.
Author_Institution :
Opt. Sci. Center, Univ. of Arizona, Tucson, AZ, USA
Abstract :
We present the design and fabrication of an optically pumped vertical-external-cavity surface-emitting lasers with double-well resonant periodic gain structure. Each double-well consists of two 4-nm-thick InGaAs strained quantum wells. The double-well provides optimum overlap between the quantum wells and the antinodes of the standing wave of laser signal at high-power and high-temperature operation. The structure is more tolerant to variation of the growth, processing, and operating temperature for maintaining high modal gain. For a 230-μm diameter pump spot, over 4-W continuous-wave output with a slope efficiency of 39% is demonstrated at 30/spl deg/C without thermal rollover.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; surface emitting lasers; 230 mum; 30 degC; 39 percent; 4 nm; InGaAs; InGaAs strained quantum wells; VECSEL; double-well resonant periodic gain structure; modal gain; optical pumping; slope efficiency; vertical-external-cavity surface-emitting lasers; Laser excitation; Optical design; Optical device fabrication; Optical pumping; Optical surface waves; Periodic structures; Pump lasers; Quantum well lasers; Resonance; Surface emitting lasers; Double-quantum-well; InGaAs; high-power laser; optical pumping; resonant periodic gain (RPG); semiconductor laser; vertical-external-cavity surface-emitting laser (VECSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.853536
