Title :
Rectifier characteristics based on bipolar-mode SIT operation
Author :
Yano, Koji ; Mitsui, Masahito ; Moroshima, Heiji ; Morita, Jun-ichi ; Kasuga, Masanobu ; Shimizu, Azuma
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Yamanashi Univ., Kofu, Japan
Abstract :
A novel rectifier concept based on bipolar-mode static induction transistor (BSIT) operation is proposed. A numerical simulation has revealed that the turn-on mechanism of this rectifier, owing to a combination of static induction effects and minority carrier injection, can make its forward-voltage drop and reverse recovery time smaller than those of the conventional p-i-n rectifier. As an example of the design methods, the simulation has clarified the effects of decreasing the doping concentration in the channel between p/sup +/ regions on improvement in the tradeoff between a forward voltage drop and leakage current.<>
Keywords :
doping profiles; field effect devices; leakage currents; minority carriers; power electronics; semiconductor diodes; simulation; solid-state rectifiers; bipolar-mode SIT operation; doping concentration; forward-voltage drop; leakage current; minority carrier injection; numerical simulation; rectifier characteristics; reverse recovery time; static induction effects; static induction transistor; turn-on mechanism; Channel spacing; Design methodology; Doping; Leakage current; PIN photodiodes; Rectifiers; Semiconductor diodes; Switching systems; Voltage;
Journal_Title :
Electron Device Letters, IEEE
